6 Inch (150.0mm)
Silicon Wafer Specifications

Material Properties

Parameter Characteristic ASTM Control Method
Type/Dopant P, Boron N, Phosphorous N, Antimony N, Arsenic F42
Orientations <100>, <111> slice off orientations per customer's specifications F26
Oxygen Content 10-19 ppmA Custom tolerances per customer's specification F121
Carbon Content < 0.6 ppmA F123
Resistivity ranges- P, Boron- N, Phosphorous- N, Antimony- N, Arsenic 0.001 - 50 ohm cm
0.1 - 40 ohm cm
0.005 - 0.025 ohm cm
< 0.005 ohm cm
F84

Mechanical Properties

Parameter Prime Monitor/ Test A Test ASTM Method
Diameter 150 ± 0.2 mm 150 ± 0.2 mm 150 ± 0.5 mm F613
Thickness 675 ± 20 µm (standard) 675 ± 25 µm (standard) 450 ± 25 µm 625 ± 25 µm 1000 ± 25 µm 1300 ± 25 µm 1500 ± 25 µm 675 ± 50 µm (standard) F533
TTV < 5 µm < 10 µm < 15 µm F657
Bow < 30 µm < 30 µm < 50 µm F657
Wrap < 30 µm < 30 µm < 50 µm F657
Edge Rounding SEMI-STD F928
Marking Primary SEMI-Flat only, SEMI-STD Flats Jeida Flat, Notch F26, F671

Surface Quality

Parameter Prime Monitor/ Test A Test ASTM Method
Front Side Criteria
Surface condition Chemical Mechanical Polished Chemical Mechanical Polished Chemical Mechanical Polished F523
Surface Roughness < 2 A° < 2 A° < 2 A°
Contamination,Particles @ >0.3 µm = 20 = 20 = 30 F523
Haze, Pits, Orange peel None None None F523
Saw Marks, striations None None None F523
Back Side Criteria
Cracks, crowsfeet, saw marks,stains None None None F523
Surface condition Caustic etched F523