100mm Silicon Wafer Specifications

Download Wafer Specifications

Surface Quality

Parameter Characteristic ASTM Control Method
Type/Dopant P, Boron N, Phosphorous N, Antimony N, Arsenic F42
Orientations <100>, <111> slice off orientations per customer’s specifications F26
Oxygen Content 10-18 ppmA Custom tolerances per customer’s specification F121
Carbon Content < 0.5 ppmA Custom tolerances per customer’s specification F123
Resistivity ranges- P, Boron- N, Phosphorous- N, Antimony- N, Arsenic 0.001 – 50 ohm cm 0.1 – 40 ohm cm 0.005 – 0.025 ohm cm < 0.005 ohm
cm
F84

Mechanical Properties

Parameter Prime Monitor/ Test A Test ASTM Method
Diameter 100 ± 0.2 mm 100 ± 0.2 mm 100 ± 0.5 mm F613
Thickness 525 ± 20 µm (standard) 525 ± 25 µm (standard) 381 ± 25 µm 625 ± 25 µm 700 ± 25
µm 800 ± 25 µm 1000 ± 25 µm 1500 ± 25 µm
525 ± 50 µm (standard) F533
TTV < 5 µm < 10 µm < 15 µm F657
Bow < 30 µm < 30 µm < 40 µm F657
Wrap < 30 µm < 30 µm < 40 µm F657
Edge Rounding SEMI-STD F928
Marking SEMI-STD Flats, Primary SEMI-Flat only F26, F671

Surface Quality

Parameter Prime Monitor/ Test A Test ASTM Method
Front Side Criteria
Surface condition Chemical Mechanical Polished Chemical Mechanical Polished Chemical Mechanical Polished F523
Surface Roughness < 2 A° < 2 A° < 2 A°
Contamination,Particles @ >0.3 µm = 20 = 20 = 30 F523
Haze, Pits, Orange peel None None None F523
Saw Marks, striations None None None F523
Back Side Criteria
Cracks, crowsfeet, saw marks,stains None None None F523
Surface condition Caustic etched F523