N-type semiconductors have a larger electron concentration than hole concentration. The term n-type comes from the negative charge of the electron. In n-type semiconductors, electrons are the majority carriers and holes are the minority carriers. N-type semiconductors are created by doping an intrinsic semiconductor with donor impurities (or doping a p-type semiconductor as done in the making of CMOS chips). A common dopant for n-type silicon is phosphorus. In an n-type semiconductor, the Fermi level is greater than that of the intrinsic semiconductor and lies closer to the conduction band than the valence band.